The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2020
Filed:
Dec. 06, 2018
Applicant:
Sandisk Technologies Llc, Addison, TX (US);
Inventors:
Quang Le, San Jose, CA (US);
Zhanjie Li, Pleasanton, CA (US);
Zhigang Bai, Fremont, CA (US);
Paul Vanderheijden, Cupertino, CA (US);
Michael Ho, Redwood City, CA (US);
Assignee:
SANDISK TECHNOLOGIES LLC, Addison, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/22 (2006.01); H01L 43/02 (2006.01); H01L 43/10 (2006.01); H01F 10/32 (2006.01); G11C 11/16 (2006.01); H01L 43/12 (2006.01);
U.S. Cl.
CPC ...
H01L 43/02 (2013.01); G11C 11/161 (2013.01); H01F 10/329 (2013.01); H01F 10/3254 (2013.01); H01F 10/3268 (2013.01); H01L 27/222 (2013.01); H01L 43/10 (2013.01); G11C 11/1655 (2013.01); G11C 11/1657 (2013.01); G11C 11/1673 (2013.01); H01L 43/12 (2013.01);
Abstract
A MRAM cell includes a magnetic tunnel junction containing a reference layer having a fixed magnetization direction, a free layer, and a nonmagnetic tunnel barrier layer located between the reference layer and the free layer, a spin torque oscillator stack, and a first nonmagnetic spacer layer located between the free layer and the a spin torque oscillator stack.