The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 20, 2020

Filed:

Jan. 16, 2018
Applicant:

Mitsubishi Gas Chemical Company, Inc., Tokyo, JP;

Inventors:

Shoichiro Sueoka, Tokyo, JP;

Tetsuhiko Mizusaka, Tokyo, JP;

Shinji Munetoh, Fukuoka, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 35/14 (2006.01); H01L 35/30 (2006.01); H01L 35/34 (2006.01); C01B 33/06 (2006.01);
U.S. Cl.
CPC ...
H01L 35/14 (2013.01); H01L 35/30 (2013.01); H01L 35/34 (2013.01); C01B 33/06 (2013.01);
Abstract

A semiconductor crystal containing a clathrate compound represented by the following formula (I), the semiconductor crystal having one end portion and the other end portion, wherein the one and the other end portions differ in concentration of at least one element in the formula (I):ADE  (I)wherein A represents at least one element selected from the group consisting of Ba, Na, Sr, and K, D represents at least one element selected from the group consisting of B, Ga, and In, E represents at least one element selected from the group consisting of Si, Ge, and Sn, x is 7 or more and 8 or less, and y is 14 or more and 20 or less.


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