The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2020
Filed:
Jun. 22, 2017
Institutt for Energiteknikk, Kjeller, NO;
Universidad Complutense DE Madrid, Madrid, ES;
Ana Cremades Rodriguez, Madrid, ES;
Chang Chuan You, Kjeller, NO;
David Maestre Varea, Madrid, ES;
Erik Stensrud Marstein, Skedsmokorset, NO;
Geraldo Cristian Vasquez Villanueva, Madrid, ES;
Halvard Haug, Kjeller, NO;
Javier Piqueres De Noriega, Madrid, ES;
Jose Maria Gonzalez Calbet, Madrid, ES;
Julio Ramirez Castellanos, Madrid, ES;
Maria Taeno Gonzalez, Madrid, ES;
Miguel Garcia Tecedor, Madrid, ES;
Smagul Karazhanov, Kjeller, NO;
INSTITUTT FOR ENERGITEKNIKK, Kjeller, NO;
UNIVERSIDAD COMPLUTENSE DE MADRID, Madrid, ES;
Abstract
A relevant technological challenge is the low cost and abundant materials development for silicon surface passivation for applications in optoelectronic devices, in particular in solar cells by scalable industrial methods. In the present invention, a new hybrid material comprising PEDOT:PSS and transparent conducting oxide nanostructures is developed and a method is proposed to fabricate the composite material that passivates well the silicon surface to be used by means of a thin composite film of thickness below 200 nm.