The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 20, 2020

Filed:

Dec. 25, 2018
Applicants:

Todos Technologies Ltd., Airport City, IL;

Technion Research and Developement Foundation Ltd., Haifa, IL;

Inventors:

Yael Nemirovsky, Haifa, IL;

Amikam Nemirovsky, Haifa, IL;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/09 (2006.01); H01L 31/18 (2006.01); H01L 31/0232 (2014.01); H01L 31/0203 (2014.01); G01J 5/02 (2006.01); H01L 21/3065 (2006.01); G01J 5/04 (2006.01); G01J 5/08 (2006.01); G01J 5/20 (2006.01); G01J 5/00 (2006.01);
U.S. Cl.
CPC ...
H01L 31/1804 (2013.01); G01J 5/023 (2013.01); G01J 5/024 (2013.01); G01J 5/0215 (2013.01); G01J 5/045 (2013.01); G01J 5/0806 (2013.01); H01L 21/3065 (2013.01); H01L 31/0203 (2013.01); H01L 31/02327 (2013.01); H01L 31/09 (2013.01); G01J 2005/0077 (2013.01); G01J 2005/202 (2013.01); G01J 2005/204 (2013.01);
Abstract

A method for manufacturing a thermal sensor, the method may include forming, using ion etching, one or more first holes that pass through (a) an initial layer, (a) a first oxide layer, (c) a first semiconductor substrate; filling the one or more first holes with oxide to form supporting elements; fabricating one or more thermal semiconductor sensing elements; forming one or more second holes in the one or more upper layers and the first oxide layer; applying an isotropic etching process to remove the first semiconductor substrate and expose the supporting elements to provide a suspended first oxide layer.


Find Patent Forward Citations

Loading…