The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2020
Filed:
Jun. 14, 2019
Sharp Kabushiki Kaisha, Sakai, Osaka, JP;
The University of Tokyo, Bunkyo-ku, Tokyo, JP;
SHARP KABUSHIKI KAISHA, Sakai, JP;
THE UNIVERSITY OF TOKYO, Tokyo, JP;
Abstract
A high detectivity infrared photodetector is provided. An infrared photodetectorincludes n-type semiconductor layersandand a photoelectric conversion layer. The photoelectric conversion layerincludes quantum dots, a barrier layer, and a single-sided barrier layer. The single-sided barrier layeris inserted between the barrier layerand the n-type semiconductor layerand has a wider band gap than does the barrier layer. Letting y be an energy level difference between the bottom of the conduction band of the single-sided barrier layerand the bottom of the conduction band of the n-type semiconductor layer, z be a voltage in volts applied to the photoelectric conversion layer, and d be a thickness in nanometers of the photoelectric conversion layer, the infrared photodetectorsatisfies y≥27×exp(0.64×z/(d×10000)).