The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2020
Filed:
Jan. 29, 2019
Hewlett Packard Enterprise Development Lp, Houston, TX (US);
Geza Kurczveil, Palo Alto, CA (US);
Di Liang, Palo Alto, CA (US);
Bassem Tossoun, Palo Alto, CA (US);
Chong Zhang, Palo Alto, CA (US);
Xiaoge Zeng, Palo Alto, CA (US);
Zhihong Huang, Palo Alto, CA (US);
Raymond Beausoleil, Palo Alto, CA;
Hewlett Packard Enterprise Development LP, Houston, TX (US);
Abstract
A quantum-dot based avalanche photodiode (QD-APD) may include a silicon substrate and a waveguide on which a quantum dot (QD) stack of layers is formed having a QD light absorption layer, a charge multiplication layer (CML), and spacer layers. The QD stack may be formed within a p-n junction. The waveguide may include a mode converter to facilitate optical coupling and light transfer from the waveguide to the QD light absorption layer. The QD absorption layer and the CML layer may be combined or separate layers. The CML may generate electrical current from the absorbed light with more than 100% quantum efficiency when the p-n junction is reverse-biased.