Preparation of anti-reflection and passivation layers of silicon surface

Abstract

A process of depositing zirconium oxide (ZrO) layers possessing dual properties of anti-reflection and passivation of silicon surfaces, including passivation of n-type and p-type silicon substrates. To grow a ZrOanti-reflection passivation layer, a precursor layer of zirconium oxide is spun on a silicon surface then dried, pyrolyzed and fired at suitable contact firing conditions, avoiding additional deposition. Thermal annealing in a hydrogen environment improves passivation quality of ZrOlayer to a level 3-4 times higher than that of fired films alone. ZrOdielectric passivation layers exhibit improved passivation quality after illumination due to photo-enhanced passivation and higher passivation quality at higher thermal budget suitable for screen printed metal contact firing, unlike standard PECVD deposited passivation layers. The method is adaptable for fabrication of silicon solar cells and other structures utilizing passivated layers.