The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 20, 2020

Filed:

Dec. 04, 2017
Applicant:

Joled Inc., Tokyo, JP;

Inventor:

Atsuhito Murai, Tokyo, JP;

Assignee:

JOLED INC., Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 29/786 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 27/32 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1296 (2013.01); H01L 27/1225 (2013.01); H01L 27/1248 (2013.01); H01L 27/1255 (2013.01); H01L 29/41733 (2013.01); H01L 29/42384 (2013.01); H01L 29/7869 (2013.01); H01L 29/78675 (2013.01); H01L 29/78696 (2013.01); H01L 27/3262 (2013.01); H01L 27/3265 (2013.01); H01L 2227/323 (2013.01);
Abstract

A semiconductor device includes a substrate. The semiconductor device further includes a first transistor. The first transistor includes a first semiconductor layer over the substrate, the first semiconductor layer including poly-silicon. The first transistor further includes a first gate electrode over the first semiconductor layer, the first gate electrode facing the first semiconductor layer. The semiconductor device further includes a second transistor. The second transistor includes a second semiconductor layer over the substrate, the second semiconductor layer including an oxide semiconductor. The second transistor further includes a second gate electrode over the second semiconductor layer, the second gate electrode facing the second semiconductor layer.


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