The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 20, 2020

Filed:

Mar. 11, 2019
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Rwik Sengupta, Austin, TX (US);

Joon Goo Hong, Austin, TX (US);

Vassilios Gerousis, Liberty Hill, TX (US);

Mark S. Rodder, Dallas, TX (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/092 (2006.01); H01L 23/528 (2006.01); H01L 29/66 (2006.01); H01L 21/8238 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0924 (2013.01); H01L 21/823821 (2013.01); H01L 21/823828 (2013.01); H01L 23/5286 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01);
Abstract

According to some example embodiments of the present disclosure, a semiconductor device includes: a substrate; a first semiconductor layer over the substrate, the first semiconductor layer being a first type of semiconductor device; and a second semiconductor layer over the substrate and the first semiconductor layer, the second semiconductor layer being the first type of semiconductor device, wherein a first portion of the first semiconductor layer overlaps the second semiconductor layer when viewed in a direction perpendicular to a plane of the substrate and a second portion of the first semiconductor layer is laterally offset from the second semiconductor layer when viewed in the direction perpendicular to the plane of the substrate.


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