The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2020
Filed:
Jul. 10, 2019
Applicant:
Mitsubishi Electric Corporation, Tokyo, JP;
Inventor:
Shunichi Watabe, Tokyo, JP;
Assignee:
Mitsubishi Electric Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/50 (2006.01); H01L 21/56 (2006.01); H01L 23/00 (2006.01); H01L 21/304 (2006.01);
U.S. Cl.
CPC ...
H01L 23/562 (2013.01); H01L 21/304 (2013.01); H01L 21/56 (2013.01);
Abstract
According a method for manufacturing a semiconductor device of the present invention, a surface protection film having an elastic modulus of 2 GPa or more is formed on a first main surface of a semiconductor wafer where an element structure is formed, the semiconductor wafer is placed on a stage with the first main surface facing the stage, and a second main surface of the semiconductor wafer opposite to the first main surface is ground.
Watabe, Shunichi. (2020). Method for manufacturing semiconductor device (U.S. Patent No. 10811368). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10811368
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile