The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 20, 2020

Filed:

May. 06, 2019
Applicant:

Akash Systems, Inc., San Francisco, CA (US);

Inventors:

Felix Ejeckam, San Francisco, CA (US);

Tyrone D. Mitchell, Jr., San Francisco, CA (US);

Paul Saunier, San Francisco, CA (US);

Assignee:

Akash Systems, Inc., San Francisco, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/36 (2006.01); H01L 23/373 (2006.01); H01L 29/20 (2006.01); B64G 1/50 (2006.01); B64G 1/10 (2006.01); H01L 29/778 (2006.01); H04B 1/04 (2006.01); H04B 1/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/3732 (2013.01); B64G 1/10 (2013.01); B64G 1/503 (2013.01); H01L 29/2003 (2013.01); H01L 29/778 (2013.01); H01L 29/7786 (2013.01); H04B 1/005 (2013.01); H04B 1/04 (2013.01);
Abstract

A high efficiency satellite transmitter comprises an RF amplifier chip in thermal contact with a radiant cooling element via a heat conducting element. The RF amplifier chip comprises an active layer disposed on a high thermal conductivity substrate having a thermal conductivity greater than about 1000 W/mK, maximizing heat conduction out of the RF amplifier chip and ultimately into outer space when the chip is operating within a satellite under normal transmission conditions. In one embodiment, the active layer comprises materials selected from the group consisting of GaN, InGaN, AlGaN, and InGaAlN alloys. In one embodiment, the high thermal conductivity substrate comprises synthetic diamond.


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