The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2020
Filed:
Jul. 27, 2018
Applicant:
Electronics and Telecommunications Research Institute, Daejeon, KR;
Inventors:
Sun Jin Yun, Daejeon, KR;
JungWook Lim, Daejeon, KR;
Kwang Hoon Jung, Changwon-si, KR;
Hyun Jun Chai, Cheonan-si, KR;
Assignee:
Electronics and Telecommunications Research Institute, Daejeon, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 16/56 (2006.01); H01L 21/56 (2006.01); C23C 16/30 (2006.01); C23C 16/455 (2006.01); H01L 29/24 (2006.01); C23C 14/18 (2006.01); H01L 29/66 (2006.01); C23C 14/58 (2006.01); C23C 14/06 (2006.01); H01L 29/786 (2006.01); H01L 29/778 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02568 (2013.01); C23C 14/06 (2013.01); C23C 14/18 (2013.01); C23C 14/5866 (2013.01); C23C 16/305 (2013.01); C23C 16/45553 (2013.01); C23C 16/56 (2013.01); H01L 21/0262 (2013.01); H01L 21/02614 (2013.01); H01L 21/02664 (2013.01); H01L 21/56 (2013.01); H01L 29/24 (2013.01); H01L 29/66742 (2013.01); H01L 29/78681 (2013.01); H01L 29/778 (2013.01);
Abstract
Provided is a method for fabricating high-uniformity and high-quality metal chalcogenide thin films. The method for fabricating metal chalcogenide thin films may include forming a metal precursor thin film including a metal thin film and a chalcogen thin film disposed on the upper surface or lower surface of the metal thin film; and performing a chalcogenization process for providing a chalcogen source on the metal precursor thin film to form a first metal chalcogenide thin film.