The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2020
Filed:
Nov. 02, 2016
Applicant:
Dexerials Corporation, Shinagawa-ku, Tokyo, JP;
Inventors:
Junichi Sugawara, Tome, JP;
Yuichi Kamori, Tome, JP;
Assignee:
Dexerials Corporation, Shinagawa-ku, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 14/34 (2006.01); H01J 37/34 (2006.01); C04B 35/453 (2006.01); C04B 35/645 (2006.01); G11B 7/243 (2013.01); C04B 35/626 (2006.01); C23C 14/08 (2006.01); G11B 7/241 (2006.01); C04B 35/64 (2006.01); G11B 7/26 (2006.01);
U.S. Cl.
CPC ...
H01J 37/3426 (2013.01); C04B 35/453 (2013.01); C04B 35/62635 (2013.01); C04B 35/64 (2013.01); C04B 35/645 (2013.01); C04B 35/6455 (2013.01); C23C 14/08 (2013.01); C23C 14/083 (2013.01); C23C 14/086 (2013.01); C23C 14/3414 (2013.01); G11B 7/241 (2013.01); G11B 7/243 (2013.01); C04B 2235/3256 (2013.01); C04B 2235/3258 (2013.01); C04B 2235/3263 (2013.01); C04B 2235/3268 (2013.01); C04B 2235/3284 (2013.01); C04B 2235/404 (2013.01); C04B 2235/5436 (2013.01); C04B 2235/656 (2013.01); C04B 2235/72 (2013.01); C04B 2235/77 (2013.01); G11B 7/266 (2013.01); G11B 2007/2432 (2013.01); G11B 2007/24304 (2013.01); G11B 2007/24306 (2013.01);
Abstract
Provided is a Mn—Zn—O sputtering target which can be used in DC sputtering, and a production method for the target. The Mn—Zn—O sputtering target comprises a chemical composition containing Mn, Zn, O, and at least one element X, the element X being a single one or two elements selected from the group consisting of W and Mo. The target has a relative density of 90% or more and a specific resistance of 1×10Ω·cm or less.