The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2020
Filed:
Dec. 21, 2016
University of Florida Research Foundation, Inc., Gainesville, FL (US);
Korea Electronics Technology Institute, Gyeonggi-do, KR;
Kyoung Tae Kim, Gainesville, FL (US);
Yong-Kyu Yoon, Gainesville, FL (US);
Dongsu Kim, Gyeonggi-do, KR;
UNIVERSITY OF FLORIDA RESEARCH FOUNDATION, INC., Gainesville, FL (US);
Abstract
Various examples are provided for hydrothermally grown BaTiO, SrTiO, and BaSrTiOon TiOnanotube layers, which can be used in ultra-high charge density capacitors. In one example, a method includes forming a first anodized titanium oxide (ATO) layer on a layer of titanium by anodization, the first ATO layer having a nanotubular morphology; removing the first ATO layer from the layer of titanium; forming a second ATO layer having a nanotubular morphology on the layer of titanium by anodization; and hydrothermally growing a layer of MTiOon a surface of the second ATO layer, where M is Ba, Sr, or BaSr. In another example, an ultra-high density charge capacitor includes a first electrode layer; an ATO layer disposed on the first electrode layer; a layer of MTiOon a surface of the ATO layer; and a second electrode layer disposed on the layer of MTiO.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile