The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 20, 2020

Filed:

Nov. 22, 2017
Applicant:

Korea University Research and Business Foundation, Seoul, KR;

Inventors:

Jongsun Park, Seoul, KR;

Woong Choi, Bucheon-Si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 29/50 (2006.01); G11C 11/418 (2006.01); G11C 11/419 (2006.01); G11C 29/52 (2006.01); G06F 30/367 (2020.01);
U.S. Cl.
CPC ...
G11C 29/50 (2013.01); G06F 30/367 (2020.01); G11C 11/418 (2013.01); G11C 11/419 (2013.01); G11C 29/52 (2013.01); G11C 2029/5002 (2013.01);
Abstract

A method for SRAM yield estimation includes: generating a first perturbation vector depending on a DC voltage input condition for an assist operation section of a SRAM which is an estimation target; calculating a first margin on the basis of the first perturbation vector; performing an AC simulation during the assist operation section depending on the DC voltage input condition; generating a second perturbation vector depending on a DC voltage input condition for a normal operation section which is set when the AC simulation is ended; calculating a second margin on the basis of the second perturbation vector; and selecting a minimum margin from among the first margin and the second margin and estimating a yield of the SRAM on the basis of the selected margin.


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