The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 20, 2020

Filed:

Jul. 05, 2018
Applicant:

SK Hynix Inc., Gyeonggi-do, KR;

Inventors:

Hoiju Chung, San Jose, CA (US);

Young-Do Hur, Chungcheongbuk-do, KR;

Hyuk Lee, Gyeonggi-do, KR;

Jang-Ryul Kim, Gyeonggi-do, KR;

Assignee:

SK hynix Inc., Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 11/10 (2006.01); G06F 3/06 (2006.01); G11C 29/52 (2006.01); H03M 13/00 (2006.01); G11C 29/04 (2006.01);
U.S. Cl.
CPC ...
G06F 11/1068 (2013.01); G06F 3/0619 (2013.01); G06F 3/0659 (2013.01); G06F 3/0673 (2013.01); G06F 11/1004 (2013.01); G06F 11/1048 (2013.01); G11C 29/52 (2013.01); G11C 2029/0411 (2013.01);
Abstract

A memory system includes an error correction code ('ECC') generation circuit using write data to generate an ECC to be stored together with the write data; a memory device, during a write operation, storing received data and a received ECC in a memory core, and, during a read operation, checking for an error in data read from the memory core, correcting the error in read data using the ECC and outputting error-corrected data and the ECC, when the error in the read data is between one bit and N bits inclusive, and outputting the read data and the ECC when no error is present in the read data or the error in the read data exceeds N bits; and an error correction circuit correcting, when an error is present in data outputted from the memory device, the error in the data outputted using an ECC outputted from the memory device.


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