The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 20, 2020

Filed:

Feb. 27, 2019
Applicant:

Toshiba Memory Corporation, Tokyo, JP;

Inventor:

Noriko Sakurai, Yokohama Kanagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/027 (2006.01); G03F 7/00 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
G03F 7/0002 (2013.01); H01L 21/0271 (2013.01); H01L 21/31127 (2013.01); H01L 21/31144 (2013.01);
Abstract

A pattern forming method comprises forming a line pattern in a first film. The line pattern includes a first pattern part including feature portions at a first dimension and a second pattern part adjacent to the first pattern part and including feature portions at a second dimension smaller than the first dimension. A second film is formed on the substrate conformally over the first film. The second film is etched to expose a top surface of the first pattern part and remove the second pattern part. The remaining first film is then removed, leaving portions of the second film that were formed on sidewalls of the first pattern part. The substrate is then processed by using those portions of the second film left after the removal of the first film as a mask.


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