The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2020
Filed:
Sep. 26, 2019
Applicant:
Shin-etsu Chemical Co., Ltd., Tokyo, JP;
Inventor:
Yukio Inazuki, Joetsu, JP;
Assignee:
SHIN-ETSU CHEMICAL CO., LTD., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/32 (2012.01); G03F 1/50 (2012.01); C23C 14/00 (2006.01); C23C 14/06 (2006.01); C23C 14/34 (2006.01); C23C 14/50 (2006.01); G03F 1/60 (2012.01); H01J 37/34 (2006.01);
U.S. Cl.
CPC ...
G03F 1/32 (2013.01); C23C 14/0036 (2013.01); C23C 14/0652 (2013.01); C23C 14/3464 (2013.01); C23C 14/505 (2013.01); G03F 1/50 (2013.01); G03F 1/60 (2013.01); H01J 37/3417 (2013.01); H01J 37/3426 (2013.01); H01J 37/3464 (2013.01);
Abstract
A halftone phase shift mask blank comprising a transparent substrate and a halftone phase shift film thereon is prepared through the step of depositing the halftone phase shift film on the substrate by using a sputtering gas containing rare gas and nitrogen gas, and plural targets including at least two silicon targets, applying powers of different values to the silicon targets, effecting reactive sputtering, and rotating the substrate on its axis in a horizontal direction. The halftone phase shift film has satisfactory in-plane uniformity of optical properties.