The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 20, 2020

Filed:

Mar. 25, 2016
Applicants:

Boe Technology Group Co., Ltd., Beijing, CN;

Beijing Boe Display Technology Co., Ltd., Beijing, CN;

Inventors:

Zengbiao Sun, Beijing, CN;

Ki Yong Kim, Beijing, CN;

Tao Wang, Beijing, CN;

Liping Luo, Beijing, CN;

Huishuang Liu, Beijing, CN;

Huali Yao, Beijing, CN;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G02F 1/1345 (2006.01); H01L 27/12 (2006.01); G02F 1/1343 (2006.01); G02F 1/1368 (2006.01); G09G 3/36 (2006.01);
U.S. Cl.
CPC ...
G02F 1/13454 (2013.01); G02F 1/1345 (2013.01); G02F 1/1368 (2013.01); G02F 1/13439 (2013.01); G02F 1/134327 (2013.01); G09G 3/3677 (2013.01); H01L 27/12 (2013.01); H01L 27/124 (2013.01); G02F 2201/121 (2013.01); G09G 2300/0408 (2013.01); G09G 2300/0426 (2013.01); G09G 2310/0286 (2013.01);
Abstract

The present application provides an array substrate and a method for manufacturing the same, and a display device including the array substrate, the array substrate includes a substrate, and a gate drive circuit and a common electrode line arranged above the substrate, the gate drive circuit and the common electrode line are arranged adjacent to each other, and at least one groove is provided in the common electrode line. In the application, by forming the groove in the common electrode line, flow of the developing solution from the common electrode line to the gate drive circuit can be effectively suppressed, so as to solve the problem that the channel is broken in the thin film transistor of the gate drive circuit due to nonuniform distribution of the developing solution.


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