The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2020
Filed:
Jul. 30, 2019
Applicant:
Bae Systems Information and Electronic Systems Integration Inc., Nashua, NH (US);
Inventor:
Renyuan Wang, Windham, NH (US);
Assignee:
BAE Systems Information and Electronic Systems Integration Inc., Nashua, NH (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G01R 33/12 (2006.01); G01R 33/038 (2006.01);
U.S. Cl.
CPC ...
G01R 33/1284 (2013.01); G01R 33/038 (2013.01);
Abstract
Techniques and architecture are disclosed for harnessing magnetostatic wave (MSW) and spin wave (SW) propagation dynamics under the influence of a strain-induced magnetocrystalline anisotropy field in yttrium iron garnet (YIG) thin-films and exploiting a strain-induced magnetocrystalline anisotropy field that can be piezoelectrically transduced to tune the MSW/SW, enabling the creation of multi-octave-tunable magnetostatic/spin-wave microwave passive components with zero-quiescent-power and high-Q in chip-scale.