The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 20, 2020

Filed:

Dec. 27, 2017
Applicants:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Samsung Display Co., Ltd., Yongin-si, Gyeonggi-do, KR;

Samsung Sdi Co., Ltd., Yongin-si, Gyeonggi-do, KR;

Inventors:

Young Seok Park, Yongin-si, KR;

Shang Hyeun Park, Yongin-si, KR;

Eun Joo Jang, Suwon-si, KR;

Hyo Sook Jang, Suwon-si, KR;

Shin Ae Jun, Seongnam-si, KR;

Dae Young Chung, Suwon-si, KR;

Taekhoon Kim, Hwaseong-si, KR;

Yuho Won, Seoul, KR;

Assignees:

SAMSUNG ELECTRONICS CO., LTD., Gyeonggi-Do, KR;

SAMSUNG DISPLAY CO., LTD., Gyeonggi-Do, KR;

SAMSUNG SDI CO., LTD., Gyeonggi-Do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C09K 11/88 (2006.01); C09K 11/02 (2006.01); H01L 51/00 (2006.01); G02B 5/22 (2006.01); H01L 27/32 (2006.01); B82Y 40/00 (2011.01); H01L 51/50 (2006.01); B82Y 30/00 (2011.01);
U.S. Cl.
CPC ...
C09K 11/883 (2013.01); C09K 11/025 (2013.01); G02B 5/22 (2013.01); G02B 5/223 (2013.01); H01L 27/322 (2013.01); H01L 51/0035 (2013.01); H01L 51/0037 (2013.01); H01L 51/0039 (2013.01); B82Y 30/00 (2013.01); B82Y 40/00 (2013.01); H01L 51/502 (2013.01); Y10S 977/774 (2013.01); Y10S 977/818 (2013.01); Y10S 977/824 (2013.01); Y10S 977/892 (2013.01); Y10S 977/896 (2013.01); Y10S 977/95 (2013.01);
Abstract

A process for preparing a quantum dot of a core-shell structure including obtaining a first mixture including first precursor including a first metal, a ligand compound, and a solvent; adding a second precursor and a particle including a first semiconductor nanocrystal to the first mixture to obtain a second mixture; and heating the second mixture up to a reaction temperature and performing a reaction between the first precursor and the second precursor to form a layer of a shell including a crystalline or amorphous material, during formation of the layer of the shell or after formation of the layer of the shell, wherein the process includes adding an organic solution including an ammonium fluorinated salt including a solid salt having a melting point of greater than or equal to about 110° C. to the second mixture.


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