Imaging device, manufacturing method, semiconductor device, and electronic device

Abstract

The present disclosure relates to an imaging device, a manufacturing method, a semiconductor device, and an electronic device that can further improve image quality. An imaging device includes a photoelectric conversion unit that receives and photoelectrically converts light, a floating diffusion layer that accumulates charge generated by the photoelectric conversion unit, and a diffusion layer that serves as a source or a drain of a transistor. Then, the floating diffusion layer is formed to have an impurity concentration lower than an impurity concentration of the diffusion layer. In addition, both a first photoelectric conversion unit that is able to accumulate the charge generated by the photoelectric conversion and a second photoelectric conversion unit from which the charge generated by the photoelectric conversion is sequentially taken out and accumulated in the floating diffusion layer are provided as the photoelectric conversion unit in one pixel, and the first photoelectric conversion unit and the second photoelectric conversion unit are arranged in a line in a longitudinal direction along a direction of illumination of light. The present technology can be applied to, for example, a back-illuminated CMOS image sensor.