The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 13, 2020

Filed:

Mar. 06, 2018
Applicant:

Seiko Epson Corporation, Tokyo, JP;

Inventors:

Hidetoshi Yamamoto, Suwa, JP;

Yuiga Hamade, Fujimi-machi, JP;

Tetsuji Fujita, Chino, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 51/00 (2006.01); G06K 9/00 (2006.01); H01L 51/50 (2006.01);
U.S. Cl.
CPC ...
H01L 51/0061 (2013.01); G06K 9/0004 (2013.01); H01L 51/0054 (2013.01); H01L 51/0059 (2013.01); H01L 51/0071 (2013.01); G06K 9/00087 (2013.01); G06K 2009/00932 (2013.01); H01L 51/508 (2013.01); H01L 51/5012 (2013.01); H01L 51/5024 (2013.01); H01L 51/5056 (2013.01); H01L 51/5072 (2013.01); H01L 51/5088 (2013.01); H01L 51/5092 (2013.01);
Abstract

A light-emitting element according to the invention includes an anode, a cathode, and a light-emitting layer which is provided between the anode and the cathode, contains a light-emitting material and a host material that holds the light-emitting material, and emits light having a peak wavelength in a near-infrared region by applying a current between the anode and the cathode, wherein the content of the light-emitting material in the light-emitting layer is 30 wt % or more and 70 wt % or less. Further, it is preferred that the light-emitting layer emits light having the peak wavelength of 700 nm or more and 960 nm or less.


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