The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 2020
Filed:
Jun. 17, 2016
Seoul Viosys Co., Ltd., Ansan-si, KR;
Seoul Viosys Co., Ltd., Ansan-si, KR;
Abstract
A light emitting diode chip including a light emitting structure having an active layer, and a distributed Bragg reflector (DBR) disposed to reflect light emitted therefrom. The DBR has first and second regions, and a third region therebetween. The first region is closer to the light emitting structure than the second and third regions. The DBR includes first material layers having a high index of refraction and second material layers having a low index of refraction alternately disposed one over another. The first material layers include first, second, and third groups having an optical thickness greater than 0.25λ+10%, in a range of 0.25λ−10% to 0.25λ+10%, and less than 0.25λ−10%, respectively. With respect to a central wavelength (λ: 554 nm) of the visible range, the first region has the first and second groups, the second region has the third group, and the third region has the second and third groups.