The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 2020
Filed:
Aug. 25, 2017
Epistar Corporation, Hsinchu, TW;
Chang-Tai Hisao, Hsinchu, TW;
I-Lun Ma, Hsinchu, TW;
Hao-Yu Chen, Hsinchu, TW;
Shu-Fen Hu, Hsinchu, TW;
Ru-Shi Liu, Hsinchu, TW;
Chih-Ming Wang, Hsinchu, TW;
Chun-Yuan Chen, Hsinchu, TW;
Yih-Hua Renn, Hsinchu, TW;
Chien-Hsin Wang, Hsinchu, TW;
Yung-Hsiang Lin, Hsinchu, TW;
EPISTAR CORPORATION, Hsinchu, TW;
Abstract
A light-emitting device includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer emitting an UV light, formed between the first semiconductor layer and the second semiconductor layer; a first transparent conductive layer formed on the second semiconductor layer, the first transparent conductive layer including metal oxide; and a second transparent conductive layer formed on the first transparent conductive layer, the second transparent conductive layer including graphene, wherein the first transparent conductive layer is continuously formed over a top surface of the second semiconductor layer, the first transparent conductive layer comprises a thickness smaller than 10 nm.