The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 13, 2020

Filed:

Mar. 27, 2019
Applicant:

Nichia Corporation, Anan, Tokushima, JP;

Inventor:

Takumi Otsuka, Anan, JP;

Assignee:

NICHIA CORPORATION, Anan-Shi, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 33/40 (2010.01); H01L 33/32 (2010.01); H01L 33/42 (2010.01);
U.S. Cl.
CPC ...
H01L 33/40 (2013.01); H01L 33/0075 (2013.01); H01L 33/32 (2013.01); H01L 33/42 (2013.01); H01L 2933/0016 (2013.01);
Abstract

A nitride semiconductor light emitting element configured to emit deep ultraviolet light, the light emitting element comprises: an n-side contact layer comprising Al, Ga, and N; and an n-electrode disposed on the contact layer, wherein the n-electrode comprises, successively from the n-side contact layer side, a first layer consisting essentially of Ti, a second layer consisting essentially of a Si-containing Al alloy, and a third layer comprising at least one of a layer consisting essentially of Ta and/or a layer consisting essentially of W.


Find Patent Forward Citations

Otsuka, Takumi. (2020). Nitride semiconductor light emitting element (U.S. Patent No. 10804434). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10804434

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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