The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 2020
Filed:
Feb. 26, 2019
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
International Business Machines Corporation, Armonk, NY (US);
Tae Yong Kwon, Suwon-si, KR;
Kang Ill Seo, Eumseong-gun, KR;
Oh Seong Kwon, Hwaseong-si, KR;
Ki Sik Choi, Watervliet, NY (US);
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
INTERNATIONAL BUSINESS NIACHINES CORPORATION, Armonk, NY (US);
Abstract
Vertical field-effect transistor (VFET) devices and methods of forming VFET devices are provided. The methods may include forming a channel region that protrudes from an upper surface of a substrate in a vertical direction, forming a gate insulator layer on a side of the channel region, after forming the gate insulator layer, forming a top source/drain on the channel region, and forming a gate electrode on the gate insulator layer.