The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 2020
Filed:
Mar. 14, 2019
Rohm Co., Ltd., Kyoto, JP;
Kenichi Yoshimochi, Kyoto, JP;
ROHM CO., LTD., Kyoto, JP;
Abstract
There is provided a nitride semiconductor device, including: a Si substrate including a front surface and a back surface; a buffer layer formed over the Si substrate; a first nitride semiconductor layer formed over the buffer layer; a second nitride semiconductor layer formed over the first nitride semiconductor layer; a gate electrode disposed over the second nitride semiconductor layer; a source electrode and a drain electrode electrically connected to the second nitride semiconductor layer, and disposed over the second nitride semiconductor layer to be spaced apart from the gate electrode that is interposed between the source electrode and the drain electrode; a back surface electrode pad formed over the back surface of the Si substrate; and a conductive path formed in the Si substrate, the buffer layer, the first nitride semiconductor layer, and the second nitride semiconductor layer.