The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 2020
Filed:
Mar. 23, 2018
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventors:
Hans Taddiken, Munich, DE;
Martin Bartels, Dresden, DE;
Andrea Cattaneo, Taufkirchen, DE;
Henning Feick, Dresden, DE;
Christian Kuehn, Munich, DE;
Anton Steltenpohl, Munich, DE;
Assignee:
INFINEON TECHNOLOGIES AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/66 (2006.01); H01L 49/02 (2006.01); H01L 27/06 (2006.01); H01L 23/522 (2006.01);
U.S. Cl.
CPC ...
H01L 28/20 (2013.01); H01L 23/66 (2013.01); H01L 27/0641 (2013.01); H01L 23/5228 (2013.01); H01L 2924/1421 (2013.01);
Abstract
A radio frequency resistor element comprises a resistive polysilicon trace, an isolation component and a semiconductor substrate. The resistive polysilicon trace is located above the isolation component. The isolation component is laterally at least partially surrounded by a modified semiconductor region located above the semiconductor substrate and having a higher charge carrier recombination rate than the semiconductor substrate.