The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 2020
Filed:
Jun. 16, 2017
Applicant:
Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;
Inventors:
Hajime Kimura, Kanagawa, JP;
Miki Suzuki, Kanagawa, JP;
Assignee:
Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/10 (2006.01); H01L 27/105 (2006.01); H01L 21/822 (2006.01); H01L 27/06 (2006.01); H01L 27/1156 (2017.01); H01L 27/12 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1052 (2013.01); H01L 21/8221 (2013.01); H01L 27/0688 (2013.01); H01L 27/1156 (2013.01); H01L 27/124 (2013.01); H01L 27/1207 (2013.01); H01L 27/1225 (2013.01); H01L 27/1255 (2013.01); H01L 29/7869 (2013.01); H01L 29/78609 (2013.01);
Abstract
A semiconductor device capable of retaining data for a long time is provided. A leakage current path between adjacent memory cells in a memory cell array included in the semiconductor device is blocked without increasing the number of manufacturing steps, so that memory retention characteristics can be improved.