Contact formation through low-tempearature epitaxial deposition in semiconductor devices

Abstract

A semiconductor material layer is deposited on a p-type source/drain region of a p-type transistor device and an n-type source/drain region of an n-type transistor device. The p-type device transistor device and the n-type transistor device are formed on a substrate of a semiconductor device. The semiconductor device includes a trench formed through an inter-level dielectric layer. The inter-level dielectric layer is formed over the n-type transistor device and the p-type transistor device. The trench exposes the p-type source/drain region of the p-type transistor device and the n-type source/drain region of the n-type transistor device. An element is implanted in the semiconductor material layer to form an amorphous layer on p-type source drain region and the n-type source/drain region. The amorphous layer is annealed to form a first metastable alloy layer upon the p-type source/drain region and a second metastable alloy layer upon the n-type source/drain region.