The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 13, 2020

Filed:

Oct. 25, 2018
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Jae-yup Chung, Yongin-si, KR;

Il-ryong Kim, Seongnam-si, KR;

Ju-youn Kim, Suwon-si, KR;

Jin-wook Kim, Hwaseong-si, KR;

Kyoung-hwan Yeo, Seoul, KR;

Yong-gi Jeong, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/088 (2006.01); H01L 27/02 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 29/165 (2006.01); H01L 21/8234 (2006.01); H01L 21/8238 (2006.01); H01L 27/092 (2006.01); H01L 21/762 (2006.01); H01L 29/08 (2006.01); H01L 29/06 (2006.01); H03K 19/0948 (2006.01); H01L 21/3105 (2006.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0886 (2013.01); H01L 21/02532 (2013.01); H01L 21/76224 (2013.01); H01L 21/823412 (2013.01); H01L 21/823431 (2013.01); H01L 21/823481 (2013.01); H01L 21/823814 (2013.01); H01L 21/823821 (2013.01); H01L 21/823878 (2013.01); H01L 27/0207 (2013.01); H01L 27/0924 (2013.01); H01L 29/0649 (2013.01); H01L 29/0847 (2013.01); H01L 29/165 (2013.01); H01L 29/66636 (2013.01); H01L 21/0228 (2013.01); H01L 21/02271 (2013.01); H01L 21/02529 (2013.01); H01L 21/31051 (2013.01); H01L 21/31116 (2013.01); H01L 21/32135 (2013.01); H01L 21/823462 (2013.01); H01L 21/823857 (2013.01); H01L 29/66545 (2013.01); H03K 19/0948 (2013.01);
Abstract

An integrated circuit device includes a substrate from which a plurality of fin-type active regions protrude, the plurality of fin-type active regions extending in parallel to one another in a first direction, and a plurality of gate structures and a plurality of fin-isolation insulating portions extending on the substrate in a second direction crossing the first direction and at a constant pitch in the first direction, wherein a pair of fin-isolation insulating portions from among the plurality of fin-isolation insulating portions are between a pair of gate structures from among the plurality of gate structures, and the plurality of fin-type active regions include a plurality of first fin-type regions and a plurality of second fin-type regions.


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