The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 13, 2020

Filed:

Nov. 15, 2019
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Seung-young Lee, Seoul, KR;

Jong-hoon Jung, Seongnam-si, KR;

Myoung-ho Kang, Suwon-si, KR;

Jung-ho Do, Hwaseong-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/02 (2006.01); G11C 11/419 (2006.01); G11C 11/40 (2006.01); H01L 23/528 (2006.01); H01L 27/105 (2006.01); H01L 27/118 (2006.01); G11C 5/14 (2006.01); G11C 7/18 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0207 (2013.01); G11C 11/40 (2013.01); G11C 11/419 (2013.01); H01L 23/5286 (2013.01); H01L 27/105 (2013.01); H01L 27/11803 (2013.01); G11C 5/147 (2013.01); G11C 7/18 (2013.01);
Abstract

In one embodiment, the standard cell includes first and second active regions defining an intermediate region between the first and second active regions; and first, second and third gate lines crossing the first and second active regions and crossing the intermediate region. The first gate line is divided into an upper first gate line and a lower first gate line by a first gap insulating layer in the intermediate region, the second gate line is undivided, and the third gate line is divided into an upper third gate line and a lower third gate line by a second gap insulating layer in the intermediate region.


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