The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 2020
Filed:
Sep. 12, 2018
Applicant:
Renesas Electronics Corporation, Tokyo, JP;
Inventor:
Keiichi Maekawa, Tokyo, JP;
Assignee:
RENESAS ELECTRONICS CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01); H01L 29/06 (2006.01); H01L 25/07 (2006.01); H01L 21/3115 (2006.01); H01L 21/84 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823857 (2013.01); H01L 21/31155 (2013.01); H01L 21/823864 (2013.01); H01L 21/84 (2013.01); H01L 25/072 (2013.01); H01L 29/0603 (2013.01); H01L 29/78606 (2013.01); H01L 21/823892 (2013.01);
Abstract
To improve reliability of a semiconductor device, in a method of manufacturing the semiconductor device, a ground plane region of an n-type MISFET is formed by ion-implanting a p-type impurity and nitrogen (N) and a ground plane region of a p-type MISFET is formed by ion-implanting an n-type impurity and one of carbon (C) and fluorine (F).