The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 2020
Filed:
Dec. 12, 2017
The 13th Research Institute of China Electronics Technology Group Corporation, Shijiazhuang, CN;
Jingjing Wang, Shijiazhuang, CN;
Zhihong Feng, Shijiazhuang, CN;
Cui Yu, Shijiazhuang, CN;
Chuangjie Zhou, Shijiazhuang, CN;
Qingbin Liu, Shijiazhuang, CN;
Zezhao He, Shijiazhuang, CN;
The 13th Research Institute Of China Electronics Technology, Shijiazhuang, CN;
Abstract
The present application discloses a semiconductor device and a method for forming a p-type conductive channel in a diamond using an abrupt heterojunction, which pertain to the technical field of fabrication of semiconductor devices. The method includes: forming a diamond layer on a substrate; forming one or multiple layers of a heterogeneous elementary substance or compound having an acceptor characteristic on an upper surface of the diamond layer; forming a heterojunction at an interface between the diamond layer and an acceptor layer; forming two-dimensional hole gas at one side of the diamond layer with a distance of 10 nm-20 nm away from the heterojunction; and using the two-dimensional hole gas as a p-type conductive channel. The method enables a concentration and a mobility of carriers to maintain stable at a temperature range of 0° C.-1000° C., thereby realizing normal operation of the diamond device at high temperature environment.