The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 13, 2020

Filed:

Mar. 06, 2017
Applicant:

Hitachi, Ltd., Chiyoda-ku, Tokyo, JP;

Inventors:

Akifumi Suzuki, Tokyo, JP;

Junji Ogawa, Tokyo, JP;

Assignee:

Hitachi, Ltd., Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03M 13/00 (2006.01); G11C 29/52 (2006.01); G06F 3/06 (2006.01); G11C 29/42 (2006.01); G06F 11/30 (2006.01); G06F 11/10 (2006.01); G11C 29/50 (2006.01); G11C 29/04 (2006.01);
U.S. Cl.
CPC ...
G11C 29/52 (2013.01); G06F 3/0619 (2013.01); G06F 3/0658 (2013.01); G06F 3/0679 (2013.01); G06F 11/1048 (2013.01); G06F 11/1068 (2013.01); G06F 11/3058 (2013.01); G11C 29/42 (2013.01); G11C 29/50004 (2013.01); G06F 3/0689 (2013.01); G06F 11/1076 (2013.01); G11C 2029/0411 (2013.01); G11C 2029/5004 (2013.01);
Abstract

A flash memory module includes a flash memory and a controller. The controller acquires information indicating reliability of monitoring target data of the flash memory, specifies a first cell, which is a cell having a threshold voltage level lower than a threshold voltage level of a corresponding cell in expected value data obtained by correcting an error bit of the monitoring target data, among cells in which error bits have occurred of the monitoring target data when it is determined that the reliability indicated by the acquired information is lower than a predetermined condition, and transmits rewrite correction target cell data, which is data corresponding to data of the first cell in the expected value data, to the flash memory. The flash memory injects an electron into the first cell based on a threshold voltage indicated by the rewrite correction target cell data.


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