The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 13, 2020

Filed:

Sep. 03, 2019
Applicant:

Toshiba Memory Corporation, Minato-ku, Tokyo, JP;

Inventors:

Ryu Ogiwara, Yokohama Kanagawa, JP;

Daisaburo Takashima, Yokohama Kanagawa, JP;

Takahiko Iizuka, Yokohama Kanagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/56 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
G11C 11/5678 (2013.01); G11C 11/5614 (2013.01); G11C 13/003 (2013.01); G11C 13/0004 (2013.01); G11C 13/0011 (2013.01); G11C 2213/72 (2013.01); G11C 2213/79 (2013.01);
Abstract

According to one embodiment, a storage device includes: a memory cell including a storage component to which a plurality of data values are allowed to set in response to a plurality of resistance values of the storage component and a selector connected in series to the storage component; a word line configured to provide a signal to select the memory cell; a bit line configured to receive a data signal from the memory cell; a first conversion circuit configured to nonlinearly convert a first current, generated in response to the data signal input to the bit line, into a first voltage; and a comparison circuit configured to compare the first voltage, converted by the first conversion circuit, with a plurality of reference voltages.


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