logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10802911 B1

PDFFull Text
Date of Patent:
Oct. 13, 2020

Filed:

Mar. 21, 2018

Non-volatile storage with wear-adjusted failure prediction

Applicant:

Western Digital Technologies, Inc., San Jose, CA (US);

Inventors:

Arthur Shulkin, Yavne, IL;

David Rozman, Kiryat Malakhi, IL;

Tomer Eliash, Kfar Saba, IL;

Assignee:

Western Digital Technologies, Inc., San Jose, CA (US);

Attorney:

Vierra Magen Marcus LLP

Primary Examiner:

Bryce P Bonzo

Assistant Examiner:

Jeison C Arcos

Int. Cl.
CPC ...
G06F 11/00 (2006.01); G06F 11/10 (2006.01); G11C 29/52 (2006.01); G11C 16/34 (2006.01); G11C 16/26 (2006.01); G11C 16/04 (2006.01); G11C 29/04 (2006.01);
U.S. Cl.
CPC ...
G06F 11/1068 (2013.01); G06F 11/1048 (2013.01); G11C 16/3495 (2013.01); G11C 29/52 (2013.01); G11C 16/0483 (2013.01); G11C 16/26 (2013.01); G11C 2029/0409 (2013.01); G11C 2029/0411 (2013.01);
Abstract

A non-volatile storage apparatus includes a set of non-volatile memory cells and one or more control circuits in communication with the set of non-volatile memory cells. The one or more control circuits are configured to collect failure bit counts (FBCs) for data read from the set of non-volatile memory cells in a first time period and manage the set of non-volatile memory cells according to a probability of occurrence of a target FBC in a second time period that is subsequent to the first time period. The probability of occurrence of the target FBC during the second time period is calculated from a model of FBC distribution change of the set of non-volatile memory cells.

Find Patent Forward Citations

Shulkin, Arthur. (2020). Non-volatile storage with wear-adjusted failure prediction (U.S. Patent No. 10802911). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10802911

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…