The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 2020
Filed:
Mar. 06, 2019
Cypress Semiconductor Corporation, San Jose, CA (US);
Anup Nayak, Fremont, CA (US);
Ramakrishna Venigalla, Bangalore, IN;
Cypress Semiconductor Corporation, San Jose, CA (US);
Abstract
Techniques for power-Field Effect Transistor (power-FET) gate drivers are described herein. In an example embodiment, a method for an USB-enabled system with an integrated circuit (IC) controller comprises: determining, by the IC controller, whether a first power path or a second power path is coupled to the IC controller, where the first power path comprises an external N-channel power-FET and the second power path comprises an external P-channel power-FET; turning and maintaining ON the external N-channel power-FET by the IC controller, when the first power path is determined as being coupled to the IC controller; and turning OFF the external N-channel power-FET and turning and maintaining ON the external P-channel power-FET by the IC controller, when the second power path is determined as being coupled to the IC controller.