The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 2020
Filed:
Dec. 11, 2018
Applicant:
Samsung Display Co., Ltd., Yongin-si, KR;
Inventors:
Assignee:
SAMSUNG DISPLAY CO., LTD., Gyeonggi-Do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N 21/95 (2006.01); G01N 21/21 (2006.01); G01N 21/84 (2006.01);
U.S. Cl.
CPC ...
G01N 21/9505 (2013.01); G01N 21/21 (2013.01); G01N 2021/216 (2013.01); G01N 2021/8477 (2013.01); G01N 2201/0683 (2013.01);
Abstract
A method of evaluating crystallinity includes irradiating light from below a polycrystalline silicon substrate, allowing the irradiated light to pass through the polycrystalline silicon substrate and a circular polarizing plate disposed above the polycrystalline silicon substrate, measuring an intensity of light having passed through the circular polarizing plate at a location vertically above the circular polarizing plate, notifying that there is an error in a crystallinity of the polycrystalline silicon substrate when the measured intensity of the light is out of an error margin of a predetermined criterion intensity of light.