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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10801113 B1

PDFFull Text
Expired
Date of Patent:
Oct. 13, 2020

Filed:

Apr. 14, 2017

Ferroelectric element and method of manufacturing ferroelectric element

Applicants:

Xianfeng Chen, Aichi, JP;

Melanie Meixner, Munich, DE;

Christian Vedder, Munich, DE;

Theodor Schneller, Aachen, DE;

Ulrich Boettger, Aachen, DE;

Inventors:

Xianfeng Chen, Aichi, JP;

Melanie Meixner, Munich, DE;

Christian Vedder, Munich, DE;

Theodor Schneller, Aachen, DE;

Ulrich Boettger, Aachen, DE;

Assignee:

Ricoh Company, Ltd., Tokyo, JP;

Attorney:

IPUSA, PLLC

Primary Examiner:

Nathan L Van Sell

Int. Cl.
CPC ...
C23C 28/00 (2006.01); C23C 18/12 (2006.01); C23C 14/30 (2006.01); H01G 4/33 (2006.01); H01G 7/06 (2006.01); H01G 4/12 (2006.01); C23C 14/18 (2006.01); C23C 14/08 (2006.01); H01G 4/008 (2006.01); C23C 14/02 (2006.01); C23C 14/16 (2006.01); C23C 14/22 (2006.01); C23C 14/34 (2006.01); C23C 14/58 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
C23C 28/36 (2013.01); C23C 14/028 (2013.01); C23C 14/081 (2013.01); C23C 14/165 (2013.01); C23C 14/185 (2013.01); C23C 14/221 (2013.01); C23C 14/30 (2013.01); C23C 14/34 (2013.01); C23C 14/5806 (2013.01); C23C 18/1208 (2013.01); C23C 18/1254 (2013.01); C23C 18/1291 (2013.01); C23C 18/1295 (2013.01); C23C 28/322 (2013.01); C23C 28/345 (2013.01); C23C 28/3455 (2013.01); H01G 4/008 (2013.01); H01G 4/1245 (2013.01); H01G 4/33 (2013.01); H01G 7/06 (2013.01); H01L 28/55 (2013.01); H01L 28/65 (2013.01);
Abstract

A method of manufacturing a ferroelectric element includes forming an insulating film on one side of a metal substrate by an electron beam (EB) vapor deposition method or a sputtering method; forming a metal film on the insulating film by the sputtering method; and forming a ferroelectric film on the metal film by a sol-gel method. The metal substrate includes iron (Fe) and nickel (Ni), and a content of the nickel (Ni) is greater than or equal to 30% and less than or equal to 40%.

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