The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 06, 2020

Filed:

Oct. 08, 2018
Applicant:

Integrated Device Technology, Inc., San Jose, CA (US);

Inventors:

Nicholaus Smith, La Mesa, CA (US);

Stefan Maireanu, Milpitas, CA (US);

Haiwen Jiang, San Jose, CA (US);

David Wilson, Soquel, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H02J 50/60 (2016.01); H02J 50/70 (2016.01); H02M 3/158 (2006.01); H02J 50/12 (2016.01); H02M 3/156 (2006.01);
U.S. Cl.
CPC ...
H02J 50/60 (2016.02); H02J 50/12 (2016.02); H02J 50/70 (2016.02); H02M 3/156 (2013.01); H02M 3/1582 (2013.01);
Abstract

In accordance with some embodiments of the present invention, a method of determining a Q-factor in a transmit circuit with a resonant circuit includes setting a system voltage; performing a coarse scan to determine a course resonant frequency; performing a fine scan based on the course scan to determine a resonant frequency; performing a final measurement at the resonant frequency to determine an average system voltage and an average peak voltage of the resonant circuit; calculating a Q parameter from the average system voltage and the average peak voltage; and calculating the Q-factor from the Q parameter.


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