The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2020
Filed:
Mar. 25, 2016
Nexeon Ltd, Oxfordshire, GB;
Young Tai Cho, Seoul, KR;
Yong Gil Choi, Daejeon, KR;
Seung Chul Park, Daejeon, KR;
Seon Park, Daejeon, KR;
Hee Young Seo, Daejeon, KR;
Jee Hye Park, Daejeon, KR;
Yong Eui Lee, Gyeonggi-do, KR;
Chul Hwan Kim, Daejeon, KR;
Nexeon Ltd, Oxfordshire, GB;
Abstract
The present invention relates to a silicon-based anode active material and a method of fabricating the same. The silicon-based anode active material according to an embodiment of the present invention comprises: particles comprising silicon and oxygen combined with the silicon, wherein a carbon-based conductive layer is coated with on outermost surface of the particles; and phosphorus doped in the particles, wherein a content of the phosphorus with respect to a total weight of the particles and the phosphorus doped in the particles have a range of 0.01 wt % to 15 wt %, and a content of the oxygen has a range of 9.5 wt % to 25 wt %.