The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2020
Filed:
Nov. 27, 2018
Applicant:
Seoul National University R&db Foundation, Seoul, KR;
Inventors:
Assignee:
Primary Examiner:
Int. Cl.
CPC ...
G11C 13/00 (2006.01); H01L 45/00 (2006.01); G06N 3/063 (2006.01);
U.S. Cl.
CPC ...
H01L 45/1253 (2013.01); G06N 3/063 (2013.01); G11C 13/0011 (2013.01); G11C 13/0069 (2013.01); H01L 45/145 (2013.01); G11C 13/004 (2013.01); G11C 13/0097 (2013.01); G11C 2013/0045 (2013.01); G11C 2013/0078 (2013.01); G11C 2213/33 (2013.01); G11C 2213/34 (2013.01);
Abstract
A resistive memory device and a method of operation of the resistive memory device are provided. The resistance memory device includes a resistance change layer that has a tunneling film and has many states. The conductance is changed symmetrically in a SET operation and a RESET operation. Thus, the resistive memory device can be used for efficient and accurate data storage as a RRAM in a high-capacity memory array, and as a synaptic device controlling the connection strength of a synapse in a neuromorphic system.