The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2020
Filed:
Nov. 07, 2018
Applicant:
Stmicroelectronics (Crolles 2) Sas, Crolles, FR;
Inventor:
Olivier Hinsinger, Barraux, FR;
Assignee:
STMicroelectronics (Crolles 2) SAS, Crolles, FR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); H01L 27/24 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
H01L 45/06 (2013.01); G11C 13/0004 (2013.01); G11C 13/0069 (2013.01); H01L 27/2436 (2013.01); H01L 27/2463 (2013.01); H01L 45/04 (2013.01); H01L 45/065 (2013.01); H01L 45/126 (2013.01); H01L 45/1233 (2013.01); H01L 45/1293 (2013.01); H01L 45/16 (2013.01); H01L 45/1608 (2013.01); G11C 2013/008 (2013.01);
Abstract
A memory cell includes a heating element topped with a phase-change material. Two first silicon oxide regions laterally surround the heating element along a first direction. Two second silicon oxide regions laterally surround the heating element along a second direction orthogonal to the first direction. Top surfaces of the heating element and the two first silicon oxide regions are coplanar such that the heating element and the two first silicon oxide regions have a same thickness.