The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2020
Filed:
Mar. 17, 2015
Applicant:
University-industry Cooperation Group of Kyung Hee University, Yongin-si, Gyeonggi-do, KR;
Inventors:
Assignee:
UNIVERSITY-INDUSTRY COOPERATION GROUP OF KYUNG HEE UNIVERSITY, Yongin-si, Gyeonggi-Do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/072 (2012.01); H01L 51/42 (2006.01); H01L 31/032 (2006.01); H01L 29/786 (2006.01); H01L 31/18 (2006.01); H01L 51/00 (2006.01);
U.S. Cl.
CPC ...
H01L 31/072 (2013.01); H01L 29/78693 (2013.01); H01L 31/032 (2013.01); H01L 31/18 (2013.01); H01L 51/422 (2013.01); H01L 51/0036 (2013.01); H01L 51/0037 (2013.01); H01L 51/0047 (2013.01); H01L 2224/05105 (2013.01); H01L 2224/05147 (2013.01); H01L 2224/05211 (2013.01); H01L 2224/05247 (2013.01); H01L 2924/10471 (2013.01); H01L 2924/10524 (2013.01); H01L 2924/10724 (2013.01); Y02E 10/549 (2013.01); Y02P 70/521 (2015.11);
Abstract
a p-type amorphous oxide semiconductor including gallium, a method of manufacturing the same, a solar cell including the same and a method of manufacturing the solar cell are disclosed. The p-type oxide semiconductor where gallium (Ga) is further combined with combination of one or more components selected from a group of CuS, SnO, ITO, IZTO, IGZO and IZO is provided.