The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 06, 2020

Filed:

Sep. 28, 2015
Applicant:

Hiphoton Co., Ltd, Hsinchu, TW;

Inventor:

Chen-Fu Chu, Hsinchu, TW;

Assignee:

Other;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0232 (2014.01); H01L 23/00 (2006.01); H01L 27/15 (2006.01); H01L 31/103 (2006.01); H01L 33/46 (2010.01); H01L 33/60 (2010.01); H01L 33/58 (2010.01); H01L 33/62 (2010.01); H01L 33/44 (2010.01); H01L 25/16 (2006.01);
U.S. Cl.
CPC ...
H01L 31/02327 (2013.01); H01L 24/97 (2013.01); H01L 27/153 (2013.01); H01L 31/1035 (2013.01); H01L 25/167 (2013.01); H01L 33/44 (2013.01); H01L 33/46 (2013.01); H01L 33/58 (2013.01); H01L 33/60 (2013.01); H01L 33/62 (2013.01); H01L 2224/16225 (2013.01); H01L 2924/181 (2013.01);
Abstract

The invention discloses a semiconductor structure, processing light signal, the semiconductor structure comprising: a first type semiconductor layer; a second type semiconductor layer; an active layer located between the first type semiconductor layer and the second type semiconductor layer; a reflector covered surfaces of the first type semiconductor layer and the second type semiconductor layer; a first pad disposed on a top surface of the reflector which is covered the first type semiconductor layer; a second pad disposed on the top surface of the reflector or second type semiconductor layer; an aperture disposed on the top surface of the first type semiconductor layer and passed through the reflector; and a light collection module disposed around the aperture or covered a top surface of the reflector.


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