The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2020
Filed:
Nov. 28, 2018
Applicants:
Hyundai Motor Company, Seoul, KR;
Kia Motors Corporation, Seoul, KR;
Inventor:
NackYong Joo, Hanam-si, KR;
Assignees:
Hyundai Motor Company, Seoul, KR;
Kia Motors Corporation, Seoul, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/739 (2006.01); H01L 29/16 (2006.01); H01L 21/02 (2006.01); H01L 29/08 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7813 (2013.01); H01L 21/02236 (2013.01); H01L 29/0865 (2013.01); H01L 29/0882 (2013.01); H01L 29/1608 (2013.01); H01L 29/4236 (2013.01); H01L 29/7397 (2013.01);
Abstract
A semiconductor device according to an exemplary embodiment of the present invention includes an n− type epitaxial layer disposed on a first surface of a substrate; a p type region disposed on the n− type epitaxial layer, an n+ type region disposed on the p type region, a gate disposed on the n− type epitaxial layer, an oxidation film disposed on the gate, a source electrode disposed on the oxidation film and the n+ type region, and a drain electrode disposed on a second surface of the substrate. The gate includes a PN junction portion.