The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2020
Filed:
Aug. 29, 2018
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Inventors:
Jongryeol Yoo, Hwaseong-si, KR;
Jeongho Yoo, Seongnam-si, KR;
Sujin Jung, Hwaseong-si, KR;
Youngdae Cho, Hwaseong-si, KR;
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/10 (2006.01); H01L 21/8234 (2006.01); H01L 21/8238 (2006.01); H01L 29/78 (2006.01); H01L 21/02 (2006.01); H01L 27/092 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66803 (2013.01); H01L 21/02532 (2013.01); H01L 21/823431 (2013.01); H01L 21/823481 (2013.01); H01L 21/823807 (2013.01); H01L 29/1054 (2013.01); H01L 29/7831 (2013.01); H01L 27/092 (2013.01); H01L 29/78 (2013.01); H01L 29/7848 (2013.01);
Abstract
A semiconductor device includes a well region in a substrate, a semiconductor pattern on the well region, the semiconductor pattern including an impurity, and a gate electrode on the semiconductor pattern. A concentration of the impurity in the semiconductor pattern increases in a direction from an upper portion of the semiconductor pattern, adjacent to the gate electrode, to a lower portion of the semiconductor pattern, adjacent to the well region.