The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2020
Filed:
Sep. 06, 2018
Industry-university Cooperation Foundation Hanyang University, Seoul, KR;
Jae Kyeong Jeong, Seoul, KR;
Ji Won Lee, Yongin-si, KR;
Abstract
Disclosed are a thin film transistor including a substrate and a gate electrode, a gate insulating film, a semiconductor layer, a source electrode, and a drain electrode formed on the substrate and a method of fabricating the thin film transistor, wherein the gate insulating film is made of a high dielectric ternary material, ABO, wherein A is any one selected from the group consisting of aluminum, silicon, gallium, germanium, neodymium, gadolinium, vanadium, lutetium, and actinium, B is any one selected from the group consisting of yttrium, lanthanum, zirconium, hafnium, tantalum, titanium, vanadium, nickel, silicon, and ytterbium, and A is an element different from B. The gate insulating film may be formed through a solution process, and a high-quality insulating film may be obtained through heat treatment at low temperature.